Wide Bandgap (WBG) & Ultra-Wide Bandgap (UWBG) Materials for Future Power Electronics

We are the Wide Bandgap (WBG) & Ultra-Wide Bandgap (UWBG) Materials Group led by Dr. Kai Fu in the Department of Electrical and Computer Engineering at the University of Utah.

Due to the excellent material properties of WBG and UWBG semiconductors, new power electronics technologies based on WBG and UWBG are critical enablers for the future power electronics including consumer electronics, power grid, electric vehicles, and data centers, to address the global challenges in energy efficiency and environmental protection. Compared to the current Si power devices, take gallium nitride (GaN) for example, GaN power devices can achieve smaller size (2x to 10x), lighter weight (2x to 8x), lower power loss (2x to 6x), and system cost reduction (10% to 30%).

Our research focuses on semiconductor devices, wide bandgap semiconductors (GaN, AlN, Ga2O3, BN, diamond), material epitaxy science, nanofabrication, semiconductor characterization, reliability, heterogeneous integration, power electronics, high-temperature electronics.