RESEARCH

Journal Papers

  1. A. Biswas, M. Xu, K. Fu, J. Zhou, R. Xu, A. B. Puthirath, J. A. Hachtel, C. Li, S. A. Iyengar, H. Kannan, X. Zhang, T. Gray, R. Vajtai, A. Glen Birdwell, M. R. Neupane, D. A. Ruzmetov, P. B. Shah, T. Ivanov, H. Zhu, Y. Zhao and P. M. Ajayan, "Properties and device performance of BN thin films grown on GaN by pulsed laser deposition," Applied Physics Letters, vol. 121, 2022.

  2. X. Zhang, X. Wei, P. Zhang, H. Zhang, L. Zhang, X. Deng, Y. Fan, G. Yu, Z. Dong, H. Fu, Y. Cai, K. Fu and B. Zhang, "Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric," Electronics (Switzerland), vol. 11, 2022.

  3. K. Fu, Z. He, C. Yang, J. Zhou, H. Fu and Y. Zhao, "GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment," Applied Physics Letters, vol. 121, 2022.

  4. M. Yuan, Q. Xie, K. Fu, T. Hossain, J. Niroula, J. A. Greer, N. Chowdhury, Y. Zhao and T. Palacios, "GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform," IEEE Electron Device Letters, p. 1–1, 2022.

  5. T.-H. Kim, K. Fu, C. Yang, Y. Zhao and E. T. Yu, "Electronic structure of epitaxially grown and regrown GaN pn junctions characterized by scanning Kelvin probe and capacitance microscopy," Journal of Applied Physics, vol. 131, 2022.

  6. H. Fu, K. Fu, S. Chowdhury, T. Palacios and Y. Zhao, "Vertical GaN Power Devices: Device Principles and Fabrication Technologies - Part II," IEEE Transactions on Electron Devices, vol. 68, p. 3212–3222, 2021.

  7. H. Fu, K. Fu, S. Chowdhury, T. Palacios and Y. Zhao, "Vertical GaN Power Devices: Device Principles and Fabrication Technologies - Part i," IEEE Transactions on Electron Devices, vol. 68, p. 3200–3211, 2021.

  8. K. Fu, H. Fu, X. Deng, P.-Y. Su, H. Liu, K. Hatch, C.-Y. Cheng, D. Messina, R. V. Meidanshahi, P. Peri, C. Yang, T.-H. Yang, J. Montes, J. Zhou, X. Qi, S. M. Goodnick, F. A. Ponce, D. J. Smith, R. Nemanich and Y. Zhao, "The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices," Applied Physics Letters, vol. 118, 2021.

  9. H. Chen, J. Zhou, D. Li, D. Chen, A. K. Vinod, H. Fu, X. Huang, T.-H. Yang, J. A. Montes, K. Fu, C. Yang, C.-Z. Ning, C. W. Wong, A. M. Armani and Y. Zhao, "Supercontinuum Generation in High Order Waveguide Mode with near-Visible Pumping Using Aluminum Nitride Waveguides," ACS Photonics, vol. 8, p. 1344–1352, 2021.

  10. C. Yang, H. Fu, K. Fu, T.-H. Yang, J. Zhou, J. Montes and Y. Zhao, "Low-leakage kV-class GaN vertical p-n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension," Semiconductor Science and Technology, vol. 36, 2021.

  11. S. Ghosh, K. Fu, F. Kargar, S. Rumyantsev, Y. Zhao and A. A. Balandin, "Low-frequency noise characteristics of GaN vertical PIN diodes - Effects of design, current, and temperature," Applied Physics Letters, vol. 119, 2021.

  12. C. Yang, H. Fu, P. Peri, K. Fu, T.-H. Yang, J. Zhou, J. Montes, D. J. Smith and Y. Zhao, "Enhancement-Mode Gate-Recess-Free GaN-Based p-Channel Heterojunction Field-Effect Transistor with Ultra-Low Subthreshold Swing," IEEE Electron Device Letters, vol. 42, p. 1128–1131, 2021.

  13. X. Wei, X. Zhang, X. Zhou, Y. Ma, W. Tang, T. Chen, W. Liu, W. Tang, G. Yu, Y. Fan, K. Fu, Y. Cai and B. Zhang, "Dual Current and Voltage Sensitivity Temperature Sensor Based on Lateral p-GaN/AlGaN/GaN Hybrid Anode Diode," IEEE Sensors Journal, vol. 21, p. 22459–22463, 2021.

  14. P. Peri, K. Fu, H. Fu, Y. Zhao and D. J. Smith, "Characterization of As-Grown and Regrown GaN-on-GaN Structures for Vertical p-n Power Devices," Journal of Electronic Materials, vol. 50, p. 2637–2642, 2021.

  15. T.-H. Yang, J. Brown, K. Fu, J. Zhou, K. Hatch, C. Yang, J. Montes, X. Qi, H. Fu, R. J. Nemanich and Y. Zhao, "AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric," Applied Physics Letters, vol. 118, 2021.

  16. B. Raghothamachar, Y. Liu, H. Peng, T. Ailihumaer, M. Dudley, F. S. Shahedipour-Sandvik, K. A. Jones, A. Armstrong, A. A. Allerman, J. Han, H. Fu, K. Fu and Y. Zhao, "X-ray topography characterization of gallium nitride substrates for power device development," Journal of Crystal Growth, vol. 544, 2020.

  17. T.-H. Yang, H. Fu, K. Fu, C. Yang, J. Montes, X. Huang, H. Chen, J. Zhou, X. Qi, X. Deng and Y. Zhao, "Vertical GaN-on-GaN Schottky Barrier Diodes with Multi-Floating Metal Rings," IEEE Journal of the Electron Devices Society, vol. 8, p. 857–863, 2020.

  18. P. Peri, K. Fu, H. Fu, Y. Zhao and D. J. Smith, "Structural breakdown in high power GaN-on-GaN p-n diode devices stressed to failure," Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 38, 2020.

  19. K. Fu, J. Zhou, X. Deng, X. Qi, D. J. Smith, S. M. Goodnick, Y. Zhao, H. Fu, X. Huang, T.-H. Yang, C.-Y. Cheng, P. R. Peri, H. Chen, J. Montes and C. Yang, "Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes," IEEE Journal of the Electron Devices Society, vol. 8, p. 74–83, 2020.

  20. P.-Y. Su, H. Liu, C. Yang, K. Fu, H. Fu, Y. Zhao and F. A. Ponce, "Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films," Applied Physics Letters, vol. 117, 2020.

  21. H. Fu, J. Montes, X. Deng, X. Qi, S. M. Goodnick, F. A. Ponce, Y. Zhao, K. Fu, S. R. Alugubelli, C.-Y. Cheng, X. Huang, H. Chen, T.-H. Yang, C. Yang and J. Zhou, "High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings," IEEE Electron Device Letters, vol. 41, p. 127–130, 2020.

  22. C. Yang, H. Fu, V. N. Kumar, K. Fu, H. Liu, X. Huang, T.-H. Yang, H. Chen, J. Zhou, X. Deng, J. Montes, F. A. Ponce, D. Vasileska and Y. Zhao, "GaN Vertical-Channel Junction Field-Effect Transistors with Regrown p-GaN by MOCVD," IEEE Transactions on Electron Devices, vol. 67, p. 3972–3977, 2020.

  23. C. Yang, H. Fu, P.-Y. Su, H. Liu, K. Fu, X. Huang, T.-H. Yang, H. Chen, J. Zhou, X. Deng, J. Montes, X. Qi, F. A. Ponce and Y. Zhao, "Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatment," Applied Physics Letters, vol. 117, 2020.

  24. J. Montes, C. Kopas, H. Chen, X. Huang, T.-H. Yang, K. Fu, C. Yang, J. Zhou, X. Qi, H. Fu and Y. Zhao, "Deep level transient spectroscopy investigation of ultra-wide bandgap (2¯01) and (001) β -Ga2O3," Journal of Applied Physics, vol. 128, 2020.

  25. K. Fu, X. Qi, H. Fu, P.-Y. Su, H. Liu, T.-H. Yang, C. Yang, J. Montes, J. Zhou, F. A. Ponce and Y. Zhao, "Characterization of MOCVD regrown p-GaN and the interface properties for vertical GaN power devices," Semiconductor Science and Technology, vol. 36, 2020.

  26. X. Huang, D. Li, P.-Y. Su, H. Fu, H. Chen, C. Yang, J. Zhou, X. Qi, T.-H. Yang, J. Montes, X. Deng, K. Fu, S. P. DenBaars, S. Nakamura, F. A. Ponce, C.-Z. Ning and Y. Zhao, "Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures," Nano Energy, vol. 76, 2020.

  27. K. Fu, H. Fu, X. Huang, T.-H. Yang, H. Chen, I. Baranowski, J. Montes, C. Yang, J. Zhou and Y. Zhao, "Threshold switching and memory behaviors of epitaxially regrown gan-on-gan vertical p-n Diodes with High Temperature Stability," IEEE Electron Device Letters, vol. 40, p. 375–378, 2019.

  28. T.-H. Yang, H. Fu, H. Chen, X. Huang, J. Montes, I. Baranowski, K. Fu and Y. Zhao, "Temperature-dependent electrical properties of β-Ga 2 O 3 Schottky barrier diodes on highly doped single-crystal substrates," Journal of Semiconductors, vol. 40, 2019.

  29. H. Chen, H. Fu, J. Zhou, X. Huang, T.-H. Yang, K. Fu, C. Yang, J. A. Montes and Y. Zhao, "Study of crystalline defect induced optical scattering loss inside photonic waveguides in UV-visible spectral wavelengths using volume current method," Optics Express, vol. 27, p. 17262–17273, 2019.

  30. X. Huang, R. Fang, C. Yang, K. Fu, H. Fu, H. Chen, T.-H. Yang, J. Zhou, J. Montes, M. Kozicki, H. Barnaby, B. Zhang and Y. Zhao, "Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device," Nanotechnology, vol. 30, 2019.

  31. H. Liu, H. Fu, K. Fu, S. R. Alugubelli, P.-Y. Su, Y. Zhao and F. A. Ponce, "Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics," Applied Physics Letters, vol. 114, 2019.

  32. H. Fu, K. Fu, H. Liu, S. R. Alugubelli, X. Huang, H. Chen, J. Montes, T.-H. Yang, C. Yang, J. Zhou, F. A. Ponce and Y. Zhao, "Implantation-and etching-free high voltage vertical GaN p-n diodes terminated by plasma-hydrogenated p-GaN: Revealing the role of thermal annealing," Applied Physics Express, vol. 12, 2019.

  33. X. Huang, W. Li, H. Fu, D. Li, C. Zhang, H. Chen, Y. Fang, K. Fu, S. P. Denbaars, S. Nakamura, S. M. Goodnick, C.-Z. Ning, S. Fan and Y. Zhao, "High-Temperature Polarization-Free III-Nitride Solar Cells with Self-Cooling Effects," ACS Photonics, vol. 6, p. 2096–2103, 2019.

  34. J. Montes, T.-H. Yang, H. Fu, H. Chen, X. Huang, K. Fu, I. Baranowski and Y. Zhao, "Effect of Proton Radiation on Ultrawide Bandgap AlN Schottky Barrier Diodes," IEEE Transactions on Nuclear Science, vol. 66, p. 91–96, 2019.

  35. S. R. Alugubelli, H. Fu, K. Fu, H. Liu, Y. Zhao and F. A. Ponce, "Dopant profiling in p-i-n GaN structures using secondary electrons," Journal of Applied Physics, vol. 126, 2019.

  36. S. R. Alugubelli, H. Fu, K. Fu, H. Liu, Y. Zhao, M. R. McCartney and F. A. Ponce, "Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes," Applied Physics Letters, vol. 115, 2019.

  37. J. Montes, C. Yang, H. Fu, T.-H. Yang, K. Fu, H. Chen, J. Zhou, X. Huang and Y. Zhao, "Demonstration of mechanically exfoliated β -Ga2O3/GaN p-n heterojunction," Applied Physics Letters, vol. 114, 2019.

  38. J. Zhou, H. Chen, H. Fu, K. Fu, X. Deng, X. Huang, T.-H. Yang, J. A. Montes, C. Yang, X. Qi, B. Zhang, X. Zhang and Y. Zhao, "Demonstration of low loss β -Ga2O3 optical waveguides in the UV-NIR spectra," Applied Physics Letters, vol. 115, 2019.

  39. K. Fu, H. Fu, X. Huang, H. Chen, T.-H. Yang, J. Montes, C. Yang, J. Zhou and Y. Zhao, "Demonstration of 1.27 kV Etch-Then-Regrow GaN p-n Junctions with Low Leakage for GaN Power Electronics," IEEE Electron Device Letters, vol. 40, p. 1728–1731, 2019.

  40. R. Hao, N. Xu, G. Yu, L. Song, F. Chen, J. Zhao, X. Deng, X. Li, K. Cheng, K. Fu, Y. Cai, X. Zhang and B. Zhang, "Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT," IEEE Transactions on Electron Devices, vol. 65, p. 1314–1320, 2018.

  41. T. He, Y. Zhao, X. Zhang, W. Lin, K. Fu, C. Sun, F. Shi, X. Ding, G. Yu, K. Zhang, S. Lu, X. Zhang and B. Zhang, "Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction," Nanophotonics, vol. 7, p. 1557–1562, 2018.

  42. H. Fu, X. Zhang, K. Fu, H. Liu, S. R. Alugubelli, X. Huang, H. Chen, I. Baranowski, T.-H. Yang, K. Xu, F. A. Ponce, B. Zhang and Y. Zhao, "Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing IMG ALIGN="MIDDLE" ALT="(101̄0)" SRC="AP180752if001.gif"/ m-plane GaN substrates," Applied Physics Express, vol. 11, 2018.

  43. K. Fu, H. Fu, H. Liu, S. R. Alugubelli, T.-H. Yang, X. Huang, H. Chen, I. Baranowski, J. Montes, F. A. Ponce and Y. Zhao, "Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition," Applied Physics Letters, vol. 113, 2018.

  44. J. Zhao, Y. Xing, K. Fu, P. Zhang, L. Song, F. Chen, T. Yang, X. Deng, S. Zhang and B. Zhang, "Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs," Journal of Semiconductors, vol. 39, 2018.

  45. L. Song, K. Fu, J. Zhao, G. Yu, R. Hao, X. Zhang, F. Chen, Y. Fan, Y. Cai and B. Zhang, "Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs," AIP Advances, vol. 8, 2018.

  46. H. Fu, K. Fu, X. Huang, H. Chen, I. Baranowski, T.-H. Yang, J. Montes and Y. Zhao, "High performance vertical GaN-on-GaN p-n power diodes with hydrogen-plasma-based edge termination," IEEE Electron Device Letters, vol. 39, p. 1018–1021, 2018.

  47. X. Huang, H. Chen, H. Fu, I. Baranowski, J. Montes, T.-H. Yang, K. Fu, B. P. Gunning, D. D. Koleske and Y. Zhao, "Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers," Applied Physics Letters, vol. 113, 2018.

  48. L. Song, K. Fu, J. Zhao, G. Yu, R. Hao, Y. Fan, Y. Cai and B. Zhang, "Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress," Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, vol. 36, 2018.

  49. D.-S. Zhao, R. Liu, K. Fu, G.-H. Yu, Y. Cai, H.-J. Huang, Y.-Q. Wang, R.-G. Sun and B.-S. Zhang, "An Al0.25 Ga0.75N/GaN Lateral Field Emission Device with a Nano Void Channel," Chinese Physics Letters, vol. 35, 2018.

  50. R. Hao, D. Wu, K. Fu, L. Song, F. Chen, J. Zhao, Z. Du, B. Zhang, Q. Wang, G. Yu, K. Cheng, Y. Cai, X. Zhang and B. Zhang, "10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current," Electronics Letters, vol. 54, p. 848–849, 2018.

  51. W. Yu, S. Li, Y. Zhang, W. Ma, T. Sun, J. Yuan, K. Fu and Q. Bao, "Near-Infrared Photodetectors Based on MoTe2/Graphene Heterostructure with High Responsivity and Flexibility," Small, vol. 13, 2017.

  52. Z. Zhang, L. Song, W. Li, K. Fu, G. Yu, X. Zhang, Y. Fan, X. Deng, S. Li, S. Sun, X. Li, J. Yuan, Q. Sun, Z. Dong, Y. Cai and B. Zhang, "Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate," Solid-State Electronics, vol. 134, p. 39–45, 2017.

  53. L. Song, K. Fu, Z. Zhang, S. Sun, W. Li, G. Yu, R. Hao, Y. Fan, W. Shi, Y. Cai and B. Zhang, "Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs," AIP Advances, vol. 7, 2017.

  54. F. Chen, S. Sun, X. Deng, K. Fu, G. Yu, L. Song, R. Hao, Y. Fan, Y. Cai and B. Zhang, "High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition," AIP Advances, vol. 7, 2017.

  55. T. Sun, Y. Wang, W. Yu, Y. Wang, Z. Dai, Z. Liu, B. N. Shivananju, Y. Zhang, K. Fu, B. Shabbir, W. Ma, S. Li and Q. Bao, "Flexible Broadband Graphene Photodetectors Enhanced by Plasmonic Cu3−xP Colloidal Nanocrystals," Small, vol. 13, 2017.

  56. W. Li, Z. Zhang, K. Fu, G. Yu, X. Zhang, S. Sun, L. Song, R. Hao, Y. Fan, Y. Cai and B. Zhang, "Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability," Journal of Semiconductors, vol. 38, 2017.

  57. R. Hao, W. Li, K. Fu, G. Yu, L. Song, J. Yuan, J. Li, X. Deng, X. Zhang, Q. Zhou, Y. Fan, W. Shi, Y. Cai, X. Zhang and B. Zhang, "Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs," IEEE Electron Device Letters, vol. 38, p. 1567–1570, 2017.

  58. Z. Zhang, W. Li, K. Fu, G. Yu, X. Zhang, Y. Zhao, S. Sun, L. Song, X. Deng, Z. Xing, L. Yang, R. Ji, C. Zeng, Y. Fan, Z. Dong, Y. Cai and B. Zhang, "AlGaN/GaN MIS-HEMTs of Very-Low Vth Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator," IEEE Electron Device Letters, vol. 38, p. 236–239, 2017.

  59. Z. Zhang, G. Yu, X. Zhang, X. Deng, S. Li, Y. Fan, S. Sun, L. Song, S. Tan, D. Wu, W. Li, W. Huang, K. Fu, Y. Cai, Q. Sun and B. Zhang, "Studies on high-voltage GaN-on-Si MIS-HEMTs using LPCVD Si3N4 as gate dielectric and passivation layer," IEEE Transactions on Electron Devices, vol. 63, p. 731–738, 2016.

  60. R. Hao, K. Fu, G. Yu, W. Li, J. Yuan, L. Song, Z. Zhang, S. Sun, X. Li, Y. Cai, X. Zhang and B. Zhang, "Normally-off p -GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment," Applied Physics Letters, vol. 109, 2016.

  61. Z. Zhang, S. Qin, K. Fu, G. Yu, W. Li, X. Zhang, S. Sun, L. Song, S. Li, R. Hao, Y. Fan, Q. Sun, G. Pan, Y. Cai and B. Zhang, "Fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid," Applied Physics Express, vol. 9, 2016.

  62. M. Hua, Y. Lu, S. Liu, C. Liu, K. Fu, Y. Cai, B. Zhang and K. J. Chen, "Compatibility of AlN/SiNx passivation with LPCVD-SiNx gate dielectric in GaN-based MIS-HEMT," IEEE Electron Device Letters, vol. 37, p. 265–268, 2016.

  63. S. Sun, K. Fu, G. Yu, Z. Zhang, L. Song, X. Deng, Z. Qi, S. Li, Q. Sun, Y. Cai, J. Dai, C. Chen and B. Zhang, "AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation," Applied Physics Letters, vol. 108, 2016.

  64. Z. Zhang, K. Fu, X. Deng, X. Zhang, Y. Fan, S. Sun, L. Song, Z. Xing, W. Huang, G. Yu, Y. Cai and B. Zhang, "Normally off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation," IEEE Electron Device Letters, vol. 36, p. 1128–1131, 2015.

  65. M. Hua, C. Liu, S. Yang, S. Liu, K. Fu, Z. Dong, Y. Cai, B. Zhang and K. J. Chen, "GaN-based metal-insulator-semiconductor high-electron-mobility transistors using low-pressure chemical vapor deposition SiNx as gate dielectric," IEEE Electron Device Letters, vol. 36, p. 448–450, 2015.

  66. M. Hua, C. Liu, S. Yang, S. Liu, K. Fu, Z. Dong, Y. Cai, B. Zhang and K. J. Chen, "Characterization of leakage and reliability of SiNx gate dielectric by low-pressure chemical vapor deposition for GaN-based MIS-HEMTs," IEEE Transactions on Electron Devices, vol. 62, p. 3215–3222, 2015.

  67. Z. Zhang, G. Yu, X. Zhang, S. Tan, D. Wu, K. Fu, W. Huang, Y. Cai and B. Zhang, "16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator," Electronics Letters, vol. 51, p. 1201–1203, 2015.

  68. G. Chen, X. Q. Wang, K. Fu, X. Rong, H. Hashimoto, B. S. Zhang, F. J. Xu, N. Tang, A. Yoshikawa, W. K. Ge and B. Shen, "Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells," Applied Physics Letters, vol. 104, 2014.

  69. S. Liu, G. Yu, K. Fu, S. Tan, Z. Zhang, C. Zeng, K. Hou, W. Huang, Y. Cai, B. Zhang and J. Yuan, "12.5 A/350 v AlGaN/GaN-on-Si MOS-HEMT with low specific on-resistance and minimal threshold hysteresis," Electronics Letters, vol. 50, p. 1322–1324, 2014.

  70. L. Yang, X. Zhou, H. Li, K. Fu and B. Zhang, "Ultra-wideband multi-frequency terahertz square microstrip patch antenna on hybrid photonic crystal substrate," Journal of Computational and Theoretical Nanoscience, vol. 10, p. 968–973, 2013.

  71. R. X. Wang, L. C. Yang, Y. M. Zhang, S. J. Xu, K. Fu, B. S. Zhang, J. F. Wang, K. Xu and H. Yang, "The effect of Ga-doped nanocrystalline ZnO electrode on deep-ultraviolet enhanced GaN photodetector," Applied Physics Letters, vol. 102, 2013.

  72. L. Yang, X. Zhou, D. Liu, H. Li, K. Fu, M. Xiong and B. Zhang, "Extraordinary transmission based on deep perforated sub-wavelength metallic hole arrays for infrared photodetector," Journal of Computational and Theoretical Nanoscience, vol. 10, p. 2131–2135, 2013.

  73. L. C. Yang, R. X. Wang, S. J. Xu, Z. Xing, Y. M. Fan, X. S. Shi, K. Fu and B. S. Zhang, "Effects of annealing temperature on the characteristics of Ga-doped ZnO film metal-semiconductor-metal ultraviolet photodetectors," Journal of Applied Physics, vol. 113, 2013.

  74. R. Wang, L. Yang, S. Xu, X. Zhang, X. Dong, Y. Zhao, K. Fu, B. Zhang and H. Yang, "Bias-voltage dependent ultraviolet photodetectors prepared by GaO x + ZnO mixture phase nanocrystalline thin films," Journal of Alloys and Compounds, vol. 566, p. 201–205, 2013.

  75. L. Yang, X. Shi, K. Chen, K. Fu and B. Zhang, "Analysis of photonic crystal and multi-frequency terahertz microstrip patch antenna," Physica B: Condensed Matter, vol. 431, p. 11–14, 2013.

  76. D. Liu, Y.-Q. Fu, L.-C. Yang, B.-S. Zhang, H.-J. Li, K. Fu and M. Xiong, "Influence of passivation layers for metal grating-based quantum well infrared photodetectors," Chinese Physics Letters, vol. 29, 2012.

  77. C. Yao, K. Fu, G. Wang, G. Yu and M. Lu, "GaN-based p-i-n X-ray detection," Physica Status Solidi (A) Applications and Materials Science, vol. 209, p. 204–206, 2012.

  78. G. Wang, K. Fu, C.-S. Yao, D. Su, G.-G. Zhang, J.-Y. Wang and M. Lu, "GaN-based PIN alpha particle detectors," Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 663, p. 10–13, 2012.

  79. K. Fu, G. Yu, C. Yao, G. Wang, M. Lu and G. Zhang, "X-ray detectors based on Fe doped GaN photoconductors," Physica Status Solidi - Rapid Research Letters, vol. 5, p. 187–189, 2011.

  80. M. Lu, G.-G. Zhang, K. Fu, G.-H. Yu, D. Su and J.-F. Hu, "Gallium nitride schottky betavoltaic nuclear batteries," Energy Conversion and Management, vol. 52, p. 1955–1958, 2011.

  81. M. Lu, G.-G. Zhang, K. Fu and G.-H. Yu, "Gallium nitride room temperature α particle detectors," Chinese Physics Letters, vol. 27, 2010.

Conference

Conference

  1. Kai Fu, Tsung-Han Yang, Jesse Brown, Jingan Zhou, Kevin Hatch, Chen Yang, Jossue Montes, Xin Qi, Houqiang Fu, Robert J. Nemanich, and Yuji Zhao, “AlGaN/GaN MISHEMTs with BN as Gate Dielectric Deposited by ECR-MPCVD,” 2022 Compound Semiconductor Week (CSW 2022), May 2022, Poster Presentation.

  2. Kai Fu, Chen Yang, Jingan Zhou, Tsung-Han Yang, Jossue Montes, Houqiang Fu, and Yuji Zhao, “GaN Vertical p-n Diodes with Avalanche Capability through Hydrogen Plasma Based Edge Termination,” 2021 Compound Semiconductor Week (CSW 2021), May 2021, online meeting, Oral Presentation.

  3. P. R. Peri, K. Hatch, D. Messina, K. Fu, Y. Zhao, R. Nemanich, and D. Smith, “Plasma enhanced atomic layer etched and regrown GaN-on-GaN high power p-n diodes,” 2020 Microscopy & Microanalysis Meeting (M&M 2020), Aug 2020, Milwaukee, WI, Oral Presentation. (Online presentation due to COVID-19). [Selected for 2020 M&M Student Scholar Award]

  4. J. Montes, H. Fu, H. Chen, X. Huang, T. H. Yang, K. Fu, C. Yang, J. Zhou, X. Qi, X. Deng, and Y. Zhao, “Examining deep-level defects in (-201) β-Ga2O3 by deep level transient spectroscopy,” The 62nd Electronic Materials Conference (EMC 2020), Jun 2020, Columbus, OH, Oral Presentation. (Online presentation due to COVID-19).

  5. K. Fu, H. Fu, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, X. Qi, X. Deng, and Y. Zhao, “1.27 kV etch-then-regrow GaN p-n junctions with low leakage for GaN power electronics,” The 62nd Electronic Materials Conference (EMC 2020), Jun 2020, Columbus, OH, Oral Presentation. (Online presentation due to COVID-19).

  6. T. H. Yang, K. Fu, H. Fu, C. Yang, J. Montes, X. Huang, H. Chen, J. Zhou, and Y. Zhao, “The investigation of vertical GaN Schottky barrier diode with floating metal guard rings,” The 62nd Electronic Materials Conference (EMC 2020), Jun 2020, Columbus, OH, Oral Presentation. (Online presentation due to COVID-19).

  7. X. Huang, D. Li, P.Y. Su, H. Fu, H. Chen, K. Fu, T. H. Yang, J. Montes, C. Yang, J. Zhou, X. Qi, X. Deng, S. P. DenBaars, S. Nakamura, F. Ponce, C. Z. Ning, and Y. Zhao, “Carrier localization and dynamics of nonpolar m-plane InGaN/GaN MQWs at elevated temperatures,” The 62nd Electronic Materials Conference (EMC 2020), Jun 2020, Columbus, OH, Oral Presentation. (Online presentation due to COVID-19).

  8. H. Fu, K. Fu, S. R. Alugubelli, C. Y. Cheng, X. Huang, H. Chen, T. H. Yang, C. Yang, J. Zhou, J. Montes, X. Deng, X. Qi, S. M. Goodnick, F. A. Ponce, and Y. Zhao, “Novel hydrogen-plasma based guard rings for high voltage vertical GaN-on-GaN p-n diodes,” The 62nd Electronic Materials Conference (EMC 2020), Jun 2020, Columbus, OH, Poster Presentation. (Online presentation due to COVID-19).

  9. J. Zhou, H. Chen, H. Fu, K. Fu, X. Deng, X. Huang, T. H. Yang, J. A. Montes, C. Yang, X. Qi, B. Zhang, X. Zhang, and Y. Zhao, “Demonstration of low loss β-Ga2O3 optical waveguides in the UV–NIR spectra,” 2020 CLEO, May 2020, San Jose, CA, Poster Presentation. (Online presentation due to COVID-19).

  10. H. Fu, K. Fu, C. Yang, H. Liu, K. A. Hatch, S. R. Alugubelli, P. Y. Su, D. C. Messina, X. Deng, B. Li, P. R. Peri, C. Y. Cheng, X. Huang, H. Chen, D. J. Smith, S. M. Goodnick, E. T. Yu, J. Han, R. J. Nemanich, F. A. Ponce, and Y. Zhao, “Recent progress on selective area regrowth and doping for vertical GaN power transistors,” 2020 Compound Semiconductor Week (CSW 2020) and the 47th International Symposium on Compound Semiconductors (ISCS 2020), May 2020, Stockholm, Sweden, Oral Presentation. (canceled due to COVID-19).

  11. C. Yang, H. Fu, V. N. Kumar, K. Fu, H. Liu, X. Huang, J. Montes, T. H. Yang, H. Chen, J. Zhou, X. Deng, F. A. Ponce, D. Vasileska, and Y. Zhao, “Normally-off GaN vertical-channel junction field-effect transistors with regrown p-GaN by MOCVD,” 2020 MRS Spring Meeting, Apr 2020, Phoenix, AZ, Oral Presentation. (canceled due to COVID-19).

  12. J. Montes, H. Fu, H. Chen, X. Huang, T. H. Yang, K. Fu, C. Yang, J. Zhou, X. Qi, X. Deng, and Y. Zhao, “Examining deep-level defects in (-201) β-Ga2O3 by deep level transient spectroscopy,” 2020 MRS Spring Meeting, Apr 2020, Phoenix, AZ, Oral Presentation. (canceled due to COVID-19).

  13. H. Fu, K. Fu, S. R. Alugubelli, C. Y. Cheng, X. Huang, H. Chen, T. H. Yang, C. Yang, J. Zhou, J. Montes, X. Deng, X. Qi, S. M. Goodnick, F. A. Ponce, and Y. Zhao, “KV-class GaN power p-n diodes with plasma-based guard rings,” 2020 MRS Spring Meeting, Apr 2020, Phoenix, AZ, Oral Presentation. (canceled due to COVID- 19).

  14. J. Zhou, H. Chen, H. Fu, K. Fu, X. Deng, X. Huang, T. H. Yang, J. A. Montes, C. Yang, X. Qi, B. Zhang, X. Zhang, and Y. Zhao, “Demonstration of low loss β-Ga2O3 optical waveguides in the UV–visible spectra,” 2020 MRS Spring Meeting, Apr 2020, Phoenix, AZ, Oral Presentation. (canceled due to COVID-19).

  15. X. Huang, D. Li, H. Fu, P. Su, H. Chen, K. Fu, S. P. DenBaars, S. Nakamura, F. Ponce, C. Z. Ning, and Y. Zhao, “High temperatures carrier dynamics of nonpolar InGaN/GaN MQWs,” 2020 MRS Spring Meeting, Apr 2020, Phoenix, AZ, Poster Presentation. (canceled due to COVID-19).

  16. K. Fu, H. Fu, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, X. Qi, X. Deng, and Y. Zhao, “Etchthen-regrow vertical GaN p-n diodes with high breakdown voltage and low leakage current,” 2020 MRS Spring Meeting, Apr 2020, Phoenix, AZ, Poster Presentation. (canceled due to COVID-19).

  17. P. Peri, K. Fu, Y. Zhao, and D. J. Smith, “Characterization of etched and grown GaN-GaN Schottky diodes,” 2019 Microscopy & Microanalysis Meeting (M&M 2019), Aug 2019, Portland, OR, Poster Presentation.

  18. H. Fu, K. Fu, H. Liu, S. R. Alugubelli, F. A. Ponce, and Y. Zhao, “Effective selective area doping for GaN vertical power transistors enabled by epitaxial regrowth,” The 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) and the 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19), Jul 2019, Keystone, CO, Oral Presentation.

  19. H. Chen, H. Fu, X. Huang, J. Zhou, T. H. Yang, K. Fu, J. Montes, C. Yang, and Y. Zhao, “Supercontinuum generation from dispersion engineered AlN waveguide arrays,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Bellevue, WA, Oral Presentation.

  20. H. Fu, K. Fu, H. Liu, S. R. Alugubelli, X. Huang, H. Chen, J. Montes, T. H. Yang, C. Yang, J. Zhou, F. A. Ponce, and Y. Zhao, “High voltage implantation-free vertical GaN power p-n diodes with a novel low-temperature plasma-based planar edge termination,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS- 13), Jul 2019, Bellevue, WA, Oral Presentation.

  21. K. Fu, H. Fu, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, and Y. Zhao, “Threshold switching and memory behaviors of GaN-on-GaN regrown vertical p-n diodes with high temperature stability,” The 13th International Conference on Nitride Semiconductors (ICNS-13), Jul 2019, Bellevue, WA, Oral Presentation.

  22. C. Yang, J. Montes, H. Fu, T. H. Yang, K. Fu, H. Chen, J. Zhou, X. Huang, and Y. Zhao, “Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Bellevue, WA, Oral Presentation.

  23. H. Chen, J. Zhou, T. H. Yang, H. Fu, J. Montes, X. Huang, K. Fu, J. Montes, C. Yang, and Y. Zhao, “Study of optical scattering loss induced by crystalline defects inside AlN waveguides using volume current method,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Bellevue, WA, Oral Presentation.

  24. X. Huang, D. Li, H. Fu, H. Chen, K. Fu, C. Yang, T. H. Yang, J. Zhou, J. Montes, S. P. DenBaars, S. Nakamura, C. Z. Ning, and Y. Zhao, “Carrier dynamics of nonpolar and polar InGaN/GaN MQWs at high temperatures,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Bellevue, WA, Oral Presentation.

  25. J. Montes, H. Fu, T. H. Yang, H. Chen, X. Huang, K. Fu, I. Baranowski, and Y. Zhao, “Effects of 3 MeV proton radiation on ultrawide bandgap aluminum nitride Schottky barrier diodes,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Bellevue, WA, Poster Presentation.

  26. X. Huang, R. Fang, C. Yang, K. Fu, H. Fu, H. Chen, T. H. Yang, J. Zhou, J. Montes, M. Kozicki, H. Barnaby, B. Zhang, and Y. Zhao, “Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide based threshold switching device,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Bellevue, WA, Poster Presentation.

  27. H. Liu, S. R. Alugubelli, P. Y. Su, H. Fu, K. Fu, Y. Zhao, and F. A. Ponce, “Nonuniform Mg doping in GaN epilayers grown on mesa structures,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS- 13), Jul 2019, Bellevue, WA, Oral Presentation.

  28. S. R. Alugubelli, H. Fu, K. Fu, H. Liu, Y. Zhao, and F. A. Ponce, “Dopant profiling in p-i-n GaN high power devices using secondary electrons,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS- 13), Jul 2019, Bellevue, WA, Oral Presentation.

  29. S. R. Alugubelli, H. Fu, K. Fu, H. Liu, Y. Zhao, and F. A. Ponce, “Electronic band structure of etch-andregrowth interface in p-i-n GaN films using electron holography,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Bellevue, WA, Poster Presentation.

  30. K. A. Hatch, D. Messina, H. Fu, K. Fu, X. Wang, M. Hao, Y. Zhao, and R. J. Nemanich, “ALE of GaN (0001) for removal of etch-induced damage,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS- 13), Jul 2019, Bellevue, WA, Poster Presentation.

  31. H. Chen, J. Zhou, H. Fu, X. Huang, T. S. Yang, K. Fu, J. Montes, C. Yang, and Y. Zhao, “Supercontinuum generation from dispersion engineered AlN nanophotonics waveguide arrays,” CLEO 2019, May 2019, San Jose, CA, Oral Presentation.

  32. H. Chen, J. Zhou, H. Fu, X. Huang, and Y. Zhao, “Study of Crystalline defect induced optical scattering loss inside AlN waveguides in UV-Visible spectral wavelengths,” CLEO 2019, May 2019, San Jose, CA, Poster Presentation.

  33. K. Fu, H. Fu, H. Liu, S. R. Alugubelli, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, F. A. Ponce, and Y. Zhao, “1.2 kV regrown GaN vertical p-n power diodes with ultra low leakage using advanced materials engineering,” 2019 Compound Semiconductor Week (CSW 2019) and the 46th International Symposium on Compound Semiconductors (ISCS 2019), May 2019, Nara, Japan, Oral Presentation (Late News).

  34. K. Fu, H. Fu, X. Huang, T. H. Yang, H. Chen, J. Montes, C. Yang, J. Zhou, and Y. Zhao, “Threshold and resistive switching behaviors in epitaxially regrown GaN P-N diodes for high temperature applications,” 2019 Compound Semiconductor Week (CSW 2019) and the 46th International Symposium on Compound Semiconductors (ISCS 2019), May 2019, Nara, Japan, Poster Presentation.

  35. K. Fu, H. Fu, H. Liu, S. R. Alugubelli, T. H. Yang, X. Huang, H. Chen, I. Baranowski, J. Montes, F. A. Ponce, and Y. Zhao, “Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition,” 2019 MRS Spring Meeting, Apr 2019, Phoenix, AZ, Oral Presentation.

  36. T. H. Yang, H. Fu, H. Chen, X. Huang, J. Montes, I. Baranowski, K. Fu, and Y. Zhao, “The study on inhomogeneity of Ga2O3 Schottky barrier diodes by modified thermionic emission model,” 2019 MRS Spring Meeting, Apr 2019, Phoenix, AZ, Oral Presentation.

  37. H. Fu, K. Fu, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, and Y. Zhao, “Observation of threshold and resistive switching behaviors in epitaxially regrown GaN p-n diodes by MOCVD,” 2019 MRS Spring Meeting, Apr 2019, Phoenix, AZ, Poster Presentation (Late News).

  38. S. R. Alugubelli, H. Fu, K. Fu, H. Liu, Y. Zhao, and F. A. Ponce, “Dopant profiling using low-voltage SEM for GaN power electronics,” 2019 MRS Spring Meeting, Apr 2019, Phoenix, AZ, Poster Presentation.

  39. H. Liu, H. Fu, K. Fu, S. R. Alugubelli, P.-Y. Su, Y. Zhao, and F. A. Ponce, “Non-uniform Mg doping in GaN epilayers on mesa structures,” 2019 MRS Spring Meeting, Apr 2019, Phoenix, AZ, Poster Presentation.

  40. K. A. Hatch, K. Fu, H. Fu, J. Brown, D. C. Messina, X. Wang, M. Hao, Y. Zhao, and R.J. Nemanich, “Atomic layer etching for selective area doping of GaN,” 2018 MRS Fall Meeting, Nov 2018, Boston, MA, Poster Presentation.

  41. Y. Zhao, J. Montes, H. Fu, K. Fu, X. Huang, H. Chen, T. H. Yang, and I. Baranowski, “Progress on radiation effects in ultra-wide bandgap AlN Schottky barrier diodes,” 2018 IEEE Nuclear and Space Radiation Effects Conference (IEEE NSREC 2018), Jul 2018, Kona, HI, Poster Presentation.

  42. X. Huang, H. Fu, H. Chen, I. Baranowski, J. Montes, T. H. Yang, K. Fu, B. P. Gunning, D. Koleske, and Y. Zhao, “Thermal reliability analysis of InGaN MQW solar cells,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Oral Presentation.

  43. X. Huang, H. Fu, H. Chen, I. Baranowski, J. Montes, T. H. Yang, K. Fu, B. P. Gunning, D. Koleske, and Y. Zhao, “Band engineering of InGaN/GaN multiple-quantum-well (MQW) solar cells,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Oral Presentation.

  44. K. Fu, R. Hao, B. Zhang, and Y. Zhao, “Normally-off p-GaN/AlGaN/GaN HEMTs by hydrogen plasma treatment,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Oral Presentation.

  45. J. Montes, H. Fu, T. H. Yang, H. Chen, X. Huang, I. Baranowski, K. Fu, and Y. Zhao, “Gamma-ray and proton radiation effects in AlN Schottky barrier diodes,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Poster Presentation.

  46. Baranowski, H. Chen, H. Fu, J. Montes, K. Fu, T. H. Yang, X. Huang, and Y. Zhao, “Thermal performance of silicon dioxide conduction blocking layers in GaN VHEMT devices,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Poster Presentation.

  47. T. H. Yang, H. Fu, X. Huang, H. Chen, J. Montes, I. Baranowski, K. Fu, and Y. Zhao, “Temperature-dependent electrical properties of beta-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates and their reverse current leakage mechanisms,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Poster Presentation.